RESUMO
The adsorption of oxygen and its reaction with target gases are the basis of the gas detection mechanism by using metal oxides. Here, we present a theoretical analysis of the sensor response, within the ionosorption model, for an n-type polycrystalline semiconductor. Our goal of our work is to reveal the mechanisms of gas sensing from a fundamental point of view. We revisit the existing models in which the sensor response presents a power-law behavior with a reducing gas partial pressure. Then, we show, based on the Wolkenstein theory of chemisorption, that the sensor response depends not only on the reducing gas partial pressure but also on the oxygen partial pressure. We also find that the obtained sensor response does not explicitly depend on the grain size, and if it does, it is exclusively through the rate constants related to the involved reactions.